IEEE 58th Semiconductor Interface Specialists Conference (SISC)

The program includes talks and poster presentations (theory and experiment) on the role of materials and their interfaces on performance and reliability of: • Logic Devices for future technology nodes (Nanosheet, CFET, VFET, etc.), • Insulators on High-Mobility substrates (SiGe, Ge, etc.), • Non-Volatile Memory for AI / In-Memory / Neuromorphic Compute (ReRAM, PCM, ECRAM, etc.), • Wide Bandgap semiconductor power devices (SiC, GaN, β-Ga2O3, etc.), • Ferroelectric devices (FeFET, FeRAM, etc.), • Steep Sub-Threshold slope logic devices (Tunnel FETs, etc.), • Low dimensional materials and devices, • Monolithic and/or Heterogeneous ICs (BEOL oxide transistors, interconnects, packaging, etc.), including machine learning / materials discovery techniques developed and used for their study.

IEEE 58th Semiconductor Interface Specialists Conference (SISC) is technically sponsored by IEEE. The proceedings  of this event are likely to be indexed in  prominent databases such as Scopus, Web of Science (WoS), Ei Compendex, DBLP, Google Scholar, and many others.