The IEEE International Integrated Reliability Workshop (IIRW) focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Topics include: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, MEMS and sensor reliability, designing-in reliability (products, circuits, systems, processes), customer product reliability requirements / manufacturer reliability tasks, wafer level reliability tests (test approaches and reliability test structures), reliability modeling and simulation, optoelectronics, and single event upsets.

IEEE International Integrated Reliability Workshop (IIRW) is technically sponsored by IEEE. The proceedings  of this event are likely to be listed in  prestigious databases such as Scopus, Web of Science (WoS), Ei Compendex, DBLP, Google Scholar, and many others.