International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Mod. and sim. of semicon. dev.: FinFETs, GAA FETs, ultra-thin SOI, emerging memory, new mater.-based, optoelectro., TFTs, sensors, power electro., spintronic, tun. FETs, SETs, organic electro., and bioelectro.; Mod. and sim. of semicon. processes, includ. first principles mater. design, and growth sim. of nano-scale fab.; Fundamental aspects of dev. mod. and sim., includ. quant. trans., thermal trans., fluctuation, noise, and reliability; Compact mod. for circuit sim., includ. low-power, high freq., and power electro. app.; Process/device/circuit co-sim. in context w. system design and verif.; Equipment, topography, litho. mod.; Interco. mod., includ. noise and parasitic effects; Num. methods and algo., includ. grid gen., user-interface, and visual.; Metrology for the mod. of semicon. dev. and processes; Multiscale approach from First Principles to TCAD sim.; Artificial intelligence, Neural Network, Differentiable programming; Neuromorphic dev. and quant. Comp.; Multi-physics sim.

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) is technically sponsored by IEEE. The proceedings  of this event are likely to be listed in  prestigious databases such as Scopus, Web of Science (WoS), Ei Compendex, DBLP, Google Scholar, and many others.